dpg 60 c 300 qb ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 360 i a v f 1.34 r 0.95 k/w v r = 1 2 3 min. 30 t = 10 ms applications: v rrm v 300 1 t vj vc = t vj c =ma 0.1 package: part number v r = t vj =c i f =a v t c = 135c d = p tot 160 w t c c = t vj 175 c -55 v i rrm = = 300 30 30 t vj = 45c dpg 60 c 300 qb v a 300 v 300 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.63 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.70 t vj = 175c r f 10.5 f = 1 mhz = c 25 m ? v 1.06 t vj =c i f =a v 30 1.39 i f =a 60 i f =a 60 2x threshold voltage slope resistance for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a 7 35 55 ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-3p r compatible with to-247 max. reverse recovery current i f =a; 30 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 200 t vj =c 25 t= 125c vj a 50 150 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20100125b data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 300 qb i rms a per pin 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 60 c 300 qb 501894 tube 30 product mar k i n g date code part no. logo order code ixys abcd d p g 60 c 300 qb part number diode hiperfred extreme fast common cathode to-3p (3) = = = dpg60c300hb dpg60c300hj dpg60c300pc DPF60C300HB to-247ad (3) isoplus247 (3) to-263ab (d2pak) to-247ad (3) similar part package 1) 1 ) marking on product dpg60c300qb 300 300 300 300 voltage class current rating [a] reverse voltage [v] = = = = rms dpg80c300hb to-247ad (3) 300 ixys reserves the right to change limits, conditions and dimensions. ? 20100125b data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 300 qb outlines to-3p ixys reserves the right to change limits, conditions and dimensions. ? 20100125b data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 300 qb 0.0 0.4 0.8 1.2 1.6 2.0 10 20 30 40 50 60 70 80 0 200 400 600 20 30 40 50 60 70 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 04080120160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] -di f /dt [a/s] t [ms] 0 200 400 600 0 100 200 300 400 500 600 0 2 4 6 8 10 12 0 200 400 600 2 4 6 8 10 12 14 16 0 200 400 600 0.1 0.2 0.3 0.4 q rr [c] v f [v] -di f /dt [a/s] z thjc [k/w] i f = 60 a 30 a 15 a i rm q rr v fr t fr t vj = 150c fig. 1 forward current i f versus forward voltage v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rm versus -di f /dt fig. 4 dynamic parameters q rr ,i rm versus t vj fig. 5 typ. reverse recovery time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr & forward recovery time t fr vs. di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/s] i rm [a] t rr [ns] -di f /dt [a/s] t fr [ns] v fr [v] 0 200 400 600 2 4 6 8 10 12 14 16 e rec [j] -di f /dt [a/s] fig. 7 typ. recovery energy e rec versus -di f /dt r thi [k/w] 0.1311 0.1377 0.3468 0.2394 0.095 t i [s] 0.0018 0.002 0.012 0.07 0.345 i f = 15 a 30 a 60 a t vj = 125c v r = 200 v t vj = 125c v r = 200 v t vj = 125c v r =200 v t vj = 125c v r =200 v i f = 30 a t vj = 125c v r = 200 v i f = 60 a 30 a 15 a i f = 60 a 30 a 15 a ixys reserves the right to change limits, conditions and dimensions. ? 20100125b data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
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